US5U38 transistor 1/5 2.5v drive pch+sbd mosfet US5U38 z structure silicon p-channel mosfet schottky barrier diode z features 1) the US5U38 combines pch mosfet with a schottky barrier diode in a tumt5 package. 2) low on-resistance with fast switching. 3) low voltage drive (2.5v). 4) built-in schottky barrier diode has low forward voltage. z applications switching z packaging specifications US5U38 tr 3000 type package code taping basic ordering unit (pieces) z absolute maximum ratings (ta=25 c) v rm v r i f i fsm tj parameter v v dss symbol ? 20 v v gss 12 a i d 1.0 a i dp 4.0 a i s ? 0.4 a i sp ? 4.0 v 20 a 0.7 a 3.0 c 150 c tch 150 v 25 limits unit channel temperature w / element p d 0.7 power dissipation w / total p d 1.0 c tstg ? 55 to +150 power dissipation range of storage temperature drain-source voltage gate-source voltage drain current continuous pulsed continuous pulsed source current (body diode) repetitive peak reverse voltage reverse voltage forward current forward current surge peak junction temperature ? 1 ? 1 ? 3 ? 2 w / element p d 0.5 power dissipation ? 3 ? 3 ? 1 pw 10 s, duty cycle 1% ? 2 60hz 1cyc. ? 3 mounted on a ceramic board z dimension s ( unit : mm ) tumt5 abbreviated symbol : u38 2.0 1.3 0.2max. (1)gate (2)source (3)anode (4)cathode (5)drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (1) (2) (5) (3) (4) z e q uivalent circuit
US5U38 transistor 2/5 z electrical characteristics (ta=25 c) parameter symbol i gss y fs av gs = 12v, v ds =0v v dd ? 15 v v dd ? 15 v unit conditions v (br) dss vi d = ? 1ma, v gs =0v i dss av ds = ? 20v, v gs =0v v gs (th) vv ds = ? 10v, i d = ? 1ma m ? i d = ? 1a, v gs = ? 4.5v r ds (on) m ? i d = ? 1a, v gs = ? 4.0v m ? i d = ? 0.5a, v gs = ? 2.5v sv ds = ? 10v, i d = ? 0.5a c iss pf v ds = ? 10v c oss pf v gs =0v c rss pf f=1mhz t d (on) ns i d = ? 0.5a t r ns t d (off) ns v gs = ? 4.5v t f ns r l 30 ? q g nc r g =10 ? r l 15 ? , r g =10 ? q gs ? typ. ? ? ? 280 310 570 ? 150 20 20 9 8 25 10 2.1 0.5 0.5 nc v gs = ? 4.5v q gd min. ? ? 20 ? ? 0.7 ? ? ? 0.7 ? ? ? ? ? ? ? ? ? ? 10 max. ? ? 1 ? 2.0 390 430 800 ? ? ? ? ? ? ? ? ? ? ? nc i d = ? 1a, ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed < mosfet > v sd ??? 1.2 v i s = ? 0.4a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions < body diode (source ? drain) > v f ?? 0.49 v i f =0.7a i r ?? 200 av r =20v reverse current forward voltage parameter symbol min. typ. max. unit conditions < di >
US5U38 transistor 3/5 z electrical characteristic curves fig.1 typical transfer characteristics 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0.001 0.1 1 0.01 10 gate ? source voltage : -v gs [ v ] drain current : ? i d (a) v ds = ? 10v pulsed ta = 125 c 75 c 25 c ? 25 c fig.2 static drain ? source on ? state resistance vs.drain current ( ) 0.01 0.1 1 100 1000 10000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance : r ds ( on )[ m ?] v gs = ? 4.5v pulsed ta = 125 c 75 c 25 c ? 25 c fig.3 static drain ? source on ? state resistance vs.drain current ( ? ) drain current : ? i d [ a ] static drain ? source on ? state resistance : r ds ( on )[ m ?] 0.01 0.1 1 100 1000 10000 10 v gs = ? 4v pulsed ta = 125 c 75 c 25 c ? 25 c fig.4 static drain ? source on ? state resistance vs.drain ? current ( ?? ) 0.01 0.1 1 100 1000 10000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance : r ds ( on )[ m ?] v gs = ? 2.5v pulsed ta = 125 c 75 c 25 c ? 25 c 10 012 8 4 26 0 250 500 750 1000 static drain ? source on ? state resistance gate ? source voltage : ? v gs [ v ] fig.5 static drain ? source on ? state resistance vs.gate ? source voltage : r ds ( on ) [m ? ] ta=25 c pulsed i d= ? 0 . 5a ? 1a fig.6 static drain ? source on ? state resistance vs.drain current 0.01 0.1 1 100 1000 10000 10 drain current : ? i d [ a ] static drain-source on ? state resistance : r ds ( on )[ m ?] v gs = ? 2 . 5v ? 4 . 0v ? 4 . 5v ta=25 c pulsed 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 source ? drain voltage : ? v sd [ v ] fig.7 reverse drain current vs. source-drain current 0.01 reverse drain current : ? i s [ a ] 0.1 10 1 v gs =0v pulsed ta = 125 c 75 c 25 c ? 25 c 0.01 0.1 1 10 100 drain ? source voltage : ? v ds [ v ] fig.8 typical capactitance vs.drain ? source voltage 10 100 1000 capacitance : c [ pf ] c iss c oss c rss ta=25 c f=1mhz v gs =0v 0.01 0.1 1 10 drain current : ? i d [ a ] fig.9 switching characteristics 1 10 1000 10000 100 switching time : t [ ns ] ta=25 c v dd = ? 15v v gs = ? 4.5v r g =10 ? pulsed t d ( off ) t d ( on ) t r t f
US5U38 transistor 4/5 fig.10 dynamic input characteristics 0 0.5 1 1.5 2 2.5 3 0 4 total gate charge : qg [ nc ] gate-source voltage: -v gs [ v ] 1 2 3 5 ta=25 c v dd = ? 15v i d = ? 1a r g =10 ? pulsed z notice 1. sbd has a large reverse leak current compared to other type of diode. therefore; it would raise a junction temperature, and increase a reverse power loss. further rise of inside temperature would cause a thermal runaway. this built-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current. 2. this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 reverse voltage : vr [v] reverse current : ir [ua] pulsed ta= - 25 ta = 25 ta = 125 ta = 75 fig.11 reverse current vs. reverse voltage 0.001 0.01 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 pulsed ta= - 25 ta = 25 ta = 125 ta = 75 fig.12 forward current vs. forward voltage forw ard voltage : v f (v) forward current : i f (a)
US5U38 transistor 5/5 z measurement circuits fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 10% 90% 10% 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.14 switching waveforms 50% 50% pulse width fig.15 gate charge measurement circuit v gs r g v ds d.u.t. i d r l v dd i g (const) fig.16 gate charge waveforms v gs qg qgs qgd v g charge
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